- 您现在的位置：买卖IC网 > Sheet目录416 > FDC6327C (Fairchild Semiconductor)MOSFET N/P-CH DUAL 20V SSOT-6
Electrical Characteristics
(continued)
T A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Type Min
Typ
Max Units
Switching Characteristics
(Note 2)
t d(on)
Turn-On Delay Time
N-Channel
N-Ch
5
15
ns
V DD = 10 V, I D = 1 A,
P-Ch
7
14
t r
Turn-On Rise Time
V GS = 4.5V, R GEN = 6 ?
N-Ch
9
18
ns
P-Ch
14
25
t d(off)
t f
Turn-Off Delay Time
Turn-Off Fall Time
P-Channel
V DD = -10 V, I D = -1 A,
V GS = -4.5 V, R GEN = 6 ?
N-Ch
P-Ch
N-Ch
12
14
3
22
25
9
ns
ns
P-Ch
3
9
Q g
Total Gate Charge
N-Channel
N-Ch
3.25
4.5
nC
V DS = 10 V, I D = 2.7 A, V GS = 4.5V
P-Ch
2.85
4.0
Q gs
Gate-Source Charge
P-Channel
N-Ch
P-Ch
0.65
0.68
nC
Q gd
Gate-Drain Charge
V DS = -10 V, I D = -1.9 A,V GS = -4.5V
N-Ch
0.90
nC
Drain-Source Diode Characteristics and Maximum Ratings
P-Ch
0.65
I S
Maximum Continuous Drain-Source Diode Forward Current
N-Ch
0.8
A
P-Ch
-0.8
V SD
Drain-Source Diode Forward V GS = 0 V, I S = 0.8 A (Note 2)
Voltage
V GS = 0 V, I S = - 0.8 A (Note 2)
N-Ch
P-Ch
0.76
-0.79
1.2
-1.2
V
Notes:
1: R θ JA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
R θ JC is guaranteed by design while R θ JA is determined by the user's board design. Both devices are assumed to be operating and sharing the dissipated heat energy
equally.
a) 130 ° C/W when
mounted on a 0.125 in 2
pad of 2 oz. copper.
b) 140 ° C/W when
mounted on a 0.005 in 2
pad of 2 oz. copper.
c) 180 ° C/W when
mounted on a 0.0015 in 2
pad of 2 oz. copper.
Scale 1 : 1 on letter size paper
2: Pulse Test: Pulse Width ≤ 300 μ s, Duty Cycle ≤ 2.0%
FDC6327C, Rev. E
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
FDC6333C
MOSFET N-CH/P-CHAN 30V SSOT6
FDC634P
MOSFET P-CH 20V 3.5A SSOT-6
FDC637AN
MOSFET N-CH 20V 6.2A SSOT-6
FDC637BNZ
MOSFET N-CH 20V 6.2A 6-SSOT
FDC638APZ
MOSFET P-CH 20V 4.5A SSOT-6
FDC638P
MOSFET P-CH 20V 4.5A SSOT-6
FDC6392S
MOSFET P-CH 20V 2.2A SSOT-6
FDC6401N
MOSFET N-CH DUAL 20V SSOT-6
相关代理商/技术参数
FDC6327C
制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL NP SUPERSOT-6
FDC6327C-CUT TAPE
制造商:FAIRCHILD 功能描述:FDC6327C 20 V 0.08 Ohm Dual N/P-Ch 2.5 V Specified PowerTrench Mosfet - SSOT-6
FDC6329L
功能描述:电源开关 IC - 配电 SSOT-6 LOAD SW 8V RoHS:否 制造商:Exar 输出端数量:1 开启电阻（最大值）:85 mOhms 开启时间（最大值）:400 us 关闭时间（最大值）:20 us 工作电源电压:3.2 V to 6.5 V 电源电流（最大值）: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOT-23-5
FDC6329L
制造商:Fairchild Semiconductor Corporation 功能描述:Power Distribution (Load) Switch IC
FDC6329L_Q
功能描述:电源开关 IC - 配电 SSOT-6 LOAD SW 8V RoHS:否 制造商:Exar 输出端数量:1 开启电阻（最大值）:85 mOhms 开启时间（最大值）:400 us 关闭时间（最大值）:20 us 工作电源电压:3.2 V to 6.5 V 电源电流（最大值）: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOT-23-5
FDC6329L-CUT TAPE
制造商:FAIRCHILD 功能描述:FDC6329 Series 8 V 2.5 A High Side Integrated Load Switch - SSOT-6
FDC6330
制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Integrated Load Switch
FDC6330L
功能描述:功率驱动器IC 20V 80mOhm P-CHANNEL RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube